Semiconductor circuit of MOS transistors for generation of refer

Details Semiconductor circuit of MOS transistors for generation of refer Semiconductor circuit of MOS transistors for generation of refer

1985-02-28

1987-02-03

Wong, Peter S.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

323314, G05F 316

Patent

active

046410813

ABSTRACT:
Semiconductor circuit of MOS transistors for generation of the desired reference voltage over a wide range with almost no dependence on the power voltage. An enhancement type MOS transistor and 1st depression type MOS transistor are connected in series across the power voltage, and a 2nd depression type MOS transistor and resistance component connected are in series across the power voltage. The above 1st depression type MOS transistor is connected to the gate of the 2nd depression type MOS transistor, and the reference voltage is derived from the connection point of the 2nd depression type MOS transistor and the resistance component.

REFERENCES:
IBM Technical Disclosure Bulletin, vol. 23, No. 5, pp. 1840-1841, R. S. Becker, Oct. 1980.
IBM Technical Disclosure Bulletin, vol. 21, No. 2, pp. 727-728, B. H. Jensen, Jul. 1978.

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