Semiconductor circuit including electrostatic discharge...

Details Semiconductor circuit including electrostatic discharge... Semiconductor circuit including electrostatic discharge...

2008-02-26

2011-10-25

Barnie, Rexford (Department: 2836)

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

C361S111000

Reexamination Certificate

active

08045304

ABSTRACT:
A semiconductor circuit includes, a first pad for a first power source, a second pad for a second power source, a third pad for an input/output signal, a protection element arranged between the third pad and the second pad; and a transistor functioning as a trigger element for use in flowing a trigger current to the protection element. The transistor includes a gate and a backgate being connected to the first pad and is connected to the protection element such that a source potential of the transistor becomes lower than a potential of the third pad, based on a voltage drop caused by the protection element, when potentials of the first pad and the third pad are kept at a power supply voltage level.

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M. Mergens, et al. Speed Optimized Diode-Triggered SCR (DTSCR) for RF ESD Protection of Ultra-Sensitive IC Nodes in Advanced Technologies, IEEE rans. Device Materi. Reliab. vol. 5, No. 3, pp. 532-542, Sep. 2005.
Keppens, et al., “ESD Protection Solutions for High Voltage Technologies”, 2004 EOS/ESD Symposium.

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