Semiconductor circuit having an excess voltage protection circui

Details Semiconductor circuit having an excess voltage protection circui Semiconductor circuit having an excess voltage protection circui

1989-12-12

1992-04-14

Pellinen, A. D.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific voltage responsive fault sensor

361 18, 361111, 361 59, H02H 320

Patent

active

051053284

ABSTRACT:
A semiconductor circuit has d.c. supply lines (10/13,11/14) and an excess voltage protection circuit. The protection circuit comprises a switching transistor (T1) connected in series with one of the supply lines (10/13) and a control circuit (15) which is responsive to a voltage detector circuit (16) coupled to the one supply line (10/13). The control circuit triggers the switching transistor to a non-conductive state upon detection of an excess voltage. The voltage detector circuit comprises a semiconductor element (T8) having a voltage breakdown characteristic correlated with one or more of the remaining semiconductor elements (T10). The semiconductor element (T8) is adapted to be driven to breakdown in response to a voltage across the supply lines less than that which will cause breakdown of the one or more remaining semiconductor elements T10. The increased current drawn by the semiconductor element (T8) at the onset of breakdown is effective to cause the control circuit to trigger the switching transistor to its non-conductive state.

REFERENCES:
patent: 3407339 (1968-10-01), Booher
patent: 3582713 (1971-06-01), Till
patent: 4020395 (1977-04-01), Erickson
patent: 4306185 (1981-12-01), Leuschner
patent: 4513341 (1985-04-01), Kollanyi

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