Semiconductor circuit having a crystal growth in an active layer

Details Semiconductor circuit having a crystal growth in an active layer Semiconductor circuit having a crystal growth in an active layer

1997-12-29

2000-09-26

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 72, 257 64, 257 65, 257 66, 257 70, 257 75, 257347, 257351, 438150, 438308, 438486, 438487, H01L 2900

Patent

active

061246026

ABSTRACT:
In a semiconductor circuit using a silicon film in which crystals grow in the direction parallel to a substrate, the distance between the position of a starting region of crystal growth and the position of the respective active layers are made the same. Thus, the difference of the characteristics due to the difference of the distance of crystal growth is corrected.

REFERENCES:
patent: 5315132 (1994-05-01), Yamazaki
patent: 5808321 (1998-09-01), Mitanaga et al.
patent: 5814835 (1998-09-01), Makita et al.

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