Semiconductor circuit for reducing flicker noise

Oscillators – With particular source of power or bias voltage

Reexamination Certificate

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C331S1170FE, C327S530000, C327S534000, C327S427000, C327S437000

Reexamination Certificate

active

07449973

ABSTRACT:
A semiconductor circuit for reducing flicker noise includes a negative-conductance generator and a body bias voltage supplying circuit. The negative-conductance generator includes a pair of cross-coupled field effect transistors in order to generate negative-conductance, wherein each field effect transistor includes a body. In order to remove flicker noise generated by the pair of the field effect transistors, the body bias voltage supplying circuit supplies a body bias voltage to the body of each of the pair of the field effect transistors so that a forward bias voltage is supplied to the body and source of each of the pair of the field effect transistors. The field effect transistors are preferably NMOS transistors or CMOS transistors. The semiconductor circuit is used in a voltage controlled oscillator (VCO) or a phase-locked loop (PLL).

REFERENCES:
patent: 6218892 (2001-04-01), Soumyanath et al.
patent: 6445216 (2002-09-01), Bruneau et al.
patent: 6445257 (2002-09-01), Cox et al.
patent: 6943637 (2005-09-01), Ruffieux
patent: 0012856 (1994-06-01), None
patent: 1020050007755 (2005-04-01), None
English Abstract for Publication No. 1994-0012856.

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