Semiconductor circuit for driving the base of a bipolar transist

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307574, 307579, 307585, 307270, 307451, 307446, 307315, 307254, H03K 1760, H03K 17687, H03K 301, H03K 1902

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active

049489941

ABSTRACT:
A system providing a drive circuit for a bipolar transistor high in speed and low in power consumption even under a low source voltage using a MOSFET is disclosed. The base current of the bipolar transistor is supplied not by short-circuiting the collector and the base thereof by a MOSFET but from another base current source.

REFERENCES:
patent: 3443122 (1969-05-01), Bowers, Jr.
patent: 3521081 (1970-07-01), Vasseur et al.
patent: 3603821 (1971-09-01), Flachsbarth
patent: 3940681 (1976-02-01), Ohsawa
patent: 4024418 (1977-05-01), Hankel
patent: 4590395 (1986-05-01), O'Connor et al.
patent: 4816705 (1989-03-01), Ohba et al.
IBM Technical Disclosure Bulletin, vol. 20, No. 9, Feb. 1978, pp. 3466-3467.
IEEE Journal of Solid-State Circuits, vol. SC-7, No. 5, Oct. 1972, pp. 411-417.

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