Semiconductor circuit devices using insulated gate-type field ef

Details Semiconductor circuit devices using insulated gate-type field ef Semiconductor circuit devices using insulated gate-type field ef

1968-10-18

1976-01-20

Heyman, John S.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307238, 307300, 307303, 357 41, 317 16, 317 31, H03K 3353, H02H 720

Patent

active

039341593

ABSTRACT:
Insulated gate-type field effect transistors used in capacitive memory circuits and having protective diodes for protecting the insulating films below the gate electrodes from electrical breakdown, in which parasitic transistor action which might be caused by minority carriers injected into semiconductor substrates by noise signals applied to the protective diodes are eliminated by means for suppressing the injection of minority carriers or by means for preventing injected minority carriers from reaching the drain regions of the field effect transistors.

REFERENCES:
patent: 3408511 (1968-10-01), Bergersen et al.
Semiconductor Electronics by Sorensen, 1961, p. 11.

Affiliated with

Also associated with

Rating

Semiconductor circuit devices using insulated gate-type field ef does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor circuit devices using insulated gate-type field ef, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor circuit devices using insulated gate-type field ef will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1700053