Semiconductor circuit device with voltage clamp

Details Semiconductor circuit device with voltage clamp Semiconductor circuit device with voltage clamp

1988-12-13

1989-09-05

Hille, Rolf

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 40, 357 41, 357 42, 307304, 3072962, H01L 2978

Patent

active

048643734

ABSTRACT:
A semiconductor circuit device includes a semiconductor substrate, a plurality of metal oxide semiconductor (MOS) transistors formed on the semiconductor substrate and a plurality of ground side power source lines formed on the semiconductor substrate. A back gate bias generating circuit is formed between the substrate and the ground side power source lines and supplies a back gate voltage to the substrate. A clamp circuit is provided, which includes an MOS diode formed on the substrate and is connected between the substrate and the ground side power source line. The clamp circuit clamps the potential of the substrate to a predetermined level when the back gate bias generating circuit is not operated.

REFERENCES:
patent: 3794862 (1974-02-01), Jenne
patent: 4062039 (1977-12-01), Nishimura
patent: 4628214 (1986-12-01), Leuschner
patent: 4631421 (1986-12-01), Inoue et al.
Chan et al., "A 100 ns 5V Only 64K.times.1 MOS Dynamic RAM," IEEE Jour. of Solid-State Circuits, vol. SC-15, (1980), Oct., No. 5, pp. 839-846.
Patent Abstracts of Japan, vol. 6, No. 107, Jun. 17, 1982, 57-39566, by Hirahara.

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