Semiconductor circuit device with high electrostatic breakdown e

Details Semiconductor circuit device with high electrostatic breakdown e Semiconductor circuit device with high electrostatic breakdown e

1997-08-01

1999-10-26

Sherry, Michael J.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Transient responsive

361 56, H02H 322

Patent

active

059739010

ABSTRACT:
In a semiconductor circuit device, an internal circuit, a common wiring pattern, a plurality of external terminals including a ground terminal, and a plurality of protection elements is provided. Each of the plurality of protection elements is connected to one of the plurality of external terminals and the common wiring pattern. Each protection element includes a clamp circuit. The clamp circuit of each of the plurality of protection elements respectively connected to the plurality of external terminals other than the ground terminal has a clamp voltage higher than a power supply voltage supplied to the internal circuit. On the other hand, the clamp circuit of the protection element connected to the ground terminal as a ground terminal clamp circuit has a clamp voltage lower than those of the clamp circuits other than the ground terminal clamp circuit.

REFERENCES:
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patent: 4839768 (1989-06-01), Daniele et al.
patent: 4870530 (1989-09-01), Hurst et al.
patent: 5515225 (1996-05-01), Gens et al.
patent: 5625522 (1997-04-01), Watt
patent: 5706156 (1998-01-01), Narita
patent: 5717559 (1998-02-01), Narita
patent: 5721656 (1998-02-01), Wu et al.
patent: 5724219 (1998-03-01), Narita
"A Novel On-Chip Electrostatic Discharge (ESD) Protection for Beyond 500MHz DRAM", IEDM 95, pp. 539-542 Narita et al.

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