Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-01-18
1997-02-11
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257255, 257773, H01L 29417
Patent
active
056024240
ABSTRACT:
A semiconductor circuit device wiring is provided in which the wiring connected to a semiconductor element is composed of a crystalline material. The crystal axis direction along which nearest neighboring atoms in a single crystal constituting the crystalline material are arranged and the electric current direction through the wiring are crossed with each other at an angle of 22.5.degree. or less.
REFERENCES:
patent: 4439752 (1984-03-01), Starr
patent: 5187561 (1993-02-01), Hasunuma et al.
K. Tsubouchi et al., "Development of Scanning .mu.-RHEED Microscopy for Microscopy for Imaging Polycrystal Grain Structure in LSI," Japanese Journal of Applied Physics, vol. 28, No. 11, Nov., 1989, pp. L2075-L2077.
Hiura Yohei
Masu Kazuya
Ohmi Tadahiro
Tsubouchi Kazuo
LandOfFree
Semiconductor circuit device wiring with F.C.C. structure, plane does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor circuit device wiring with F.C.C. structure, plane, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor circuit device wiring with F.C.C. structure, plane will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-344552