Semiconductor circuit device wiring with F.C.C. structure, plane

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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257255, 257773, H01L 29417

Patent

active

056024240

ABSTRACT:
A semiconductor circuit device wiring is provided in which the wiring connected to a semiconductor element is composed of a crystalline material. The crystal axis direction along which nearest neighboring atoms in a single crystal constituting the crystalline material are arranged and the electric current direction through the wiring are crossed with each other at an angle of 22.5.degree. or less.

REFERENCES:
patent: 4439752 (1984-03-01), Starr
patent: 5187561 (1993-02-01), Hasunuma et al.
K. Tsubouchi et al., "Development of Scanning .mu.-RHEED Microscopy for Microscopy for Imaging Polycrystal Grain Structure in LSI," Japanese Journal of Applied Physics, vol. 28, No. 11, Nov., 1989, pp. L2075-L2077.

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