Semiconductor circuit device operating in synchronization with c

Static information storage and retrieval – Addressing – Sync/clocking

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36523008, G11C 800

Patent

active

059994835

ABSTRACT:
A synchronous DRAM includes a mode register, and a logic circuit controlling the drivability of a CMOS output buffer circuit in response to a signal which is set in the mode register. The output buffer circuit includes a plurality of P channel MOS transistors and an N channel MOS transistor. A signal which corresponds to the frequency of an external clock signal is set in the mode register. The logic circuit selectively turns on/off the plurality of P channel MOS transistors. When the frequency is low, the number of transistors which are turned on is reduced, and the drivability of the buffer circuit is lowered. Accordingly, a ringing phenomenon is suppressed.

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patent: 5289413 (1994-02-01), Tsuchida et al.
patent: 5694074 (1997-12-01), Kitade et al.
patent: 5708603 (1998-01-01), Tanaka
patent: 5796313 (1998-08-01), Eitan

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