Patent
1986-09-25
1987-06-09
James, Andrew J.
357 46, 357 34, 357 35, 357 51, H01L 2990
Patent
active
046724028
ABSTRACT:
In a semiconductor circuit device having a diode as an overvoltage protection element, a semiconductor substrate is comprised of an N-type collector substrate integral with a transistor. An N.sup.+ type collector diffusion layer is formed on the rear surface of the substrate. A P-type anode region and a N.sup.+ cathode region are formed in the major surface of the substrate so that they are spaced apart from each other and the N.sup.+ cathode region has the same type of impurity, but at a higher impurity concentration level than, the semiconductor substrate. An insulating film is formed on the surface of the resultant structure. A gate electrode is formed in an overlapping relation to the anode region and cathode region with an insulating film therebetween. A gate potential is established between the gate electrode and the underlying substrate.
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Electronics, p. 42, Apr. 26, 1971.
Toyoshima Shoji
Tsuzuki Yukio
Yamaoka Masami
James Andrew J.
Mintel William A.
Nippondenso Co. Ltd.
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