Semiconductor circuit device capable of reducing influence of a

Details Semiconductor circuit device capable of reducing influence of a Semiconductor circuit device capable of reducing influence of a

1995-05-26

1995-12-26

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257296, 257379, 257532, 257536, 327 54, 327 55, 327 65, 327 67, 327 81, 327 89, 327280, 327287, H01L 2900, H01L 2976

Patent

active

054790450

ABSTRACT:
In a semiconductor circuit device comprising a differential amplifier circuit, which is formed on a semiconductor substrate and which comprises first and second input terminals, and a circuit element formed on the semiconductor substrate and connected to one of the first and the second input terminals. A dummy circuit element is formed on the semiconductor substrate so as to adjoin the circuit element for forming between the dummy circuit element and the semiconductor substrate a dummy parasitic capacitor which is equivalent to a parasitic capacitor formed between the circuit element and the semiconductor substrate. The dummy circuit element is connected to another one of the first and the second input terminals.

REFERENCES:
patent: 4636738 (1987-01-01), Westwick et al.
patent: 4641108 (1987-02-01), Gill, Jr.
patent: 4812733 (1989-03-01), Tobey
patent: 5406118 (1995-04-01), Saito
T. Wakimoto et al.; "A Low-Power Wide-Band Amplifier Using a New Parasitic Capacitance Compensation Technique"; IEEE Journal of Solid State Circuits, vol. 5, No. 1, Feb. 1990, pp. 200-206.

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