Semiconductor circuit device capable of reducing influence of a

Details Semiconductor circuit device capable of reducing influence of a Semiconductor circuit device capable of reducing influence of a

1994-06-22

1995-12-26

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257508, 257536, 257659, H01L 2702

Patent

active

054790441

ABSTRACT:
A semiconductor circuit device includes a differential amplifier circuit having a first parasitic capacitor formed between the semiconductor substrate and a first resistor and a second parasitic capacitor formed between the semiconductor substrate and a second resistor. Each of the first and the second resistors is implemented by a wiring pattern over the substrate so that the first and the second parasitic capacitors are equivalent to each other.

REFERENCES:
patent: 4636738 (1987-01-01), Westwick et al.
patent: 4866502 (1989-09-01), Tomaszewski et al.
patent: 5418385 (1995-05-01), Kawamoto et al.
Tsutomu Wakimoto, et al., "A Low-Power Wide-Band Amplifier Using a New Parasitic Capacitance Compensation Technique", IEEE Journal of Solid State Circuits, vol. 25, No. 1, Feb. 1990, pp. 200-206.

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