Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1994-08-03
1995-04-11
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257280, 257473, H01L 2980
Patent
active
054060982
ABSTRACT:
A semiconductor circuit device is disclosed in which an impurity ion implanted region is formed in a substrate, a Schottky junction type gate electrode is formed above the impurity ion implanted region, and a source electrode and a drain electrode are formed on both sides of the gate electrode. In this device, an InGaP barrier layer is formed between the substrate and the electrodes, a cap layer comprising a semiconductor free from In as a constituent is formed between the InGaP barrier layer and the electrodes, and the gate electrode is formed of a refractory metal.
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J. Vac. Sci. Technol. B, vol. 6, No. 5, Sep./Oct. 1988, pp. 1526-1529, "Reactively Sputtered WSiN Film Suppresses As and Ga Outdiffusion", Kazuyoshi Asai et al.
Extended Abstracts, JSAP Catalog No. AP 931122-03, No. 3 May, 1993, p. 1185, 28p-ZM-4, "Thermal Stability of WSiN/InGaP Schottky Contacts", Shiojima et al.
The Electrochemical Society, Inc., 184th Meeting Program, Oct. 10-15, 1993, p. 149, "Thermally Stable Schottky Contact On InGaP/GaAs", Shiojima et al.
Inst. Phys. Conf. Ser. No. 33b, 1977, Chapter 3, pp. 145-153, "Effects of Heat Treatment on Metal-InP Schottky Barriers Characterized By Secondary Ion Mass Spectrometry".
International Electron Devices Meeting, Dec. 3-5, 1979, pp. 469-472, "High Temperature Stable Metal-GaAs Contacts", E. Kohn.
Aoki Tatsuo
Asai Kazuyoshi
Hyuga Fumiaki
Nishimura Kazumi
Shiojima Kenji
Bowers Courtney A.
James Andrew J.
Nippon Telegraph & Telephone Corporation
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