Semiconductor circuit device and method for production thereof

Details Semiconductor circuit device and method for production thereof Semiconductor circuit device and method for production thereof

1993-12-22

1994-11-29

Thomas, Tom

Fishing, trapping, and vermin destroying

437 41, 437 45, H01L 21265

Patent

active

053690435

ABSTRACT:
A semiconductor circuit device is disclosed in which an impurity ion implanted region is formed in a substrate, a Schottky junction type gate electrode is formed above the impurity ion implanted region, and a source electrode and a drain electrode are formed on both sides of the gate electrode. In this device, an InGaP barrier layer is formed between the substrate and the electrodes, a cap layer comprising a semiconductor free from In as a constituent is formed between the InGaP barrier layer and the electrodes, and the gate electrode is formed of a refractory metal.

REFERENCES:
patent: 4895520 (1990-01-01), Berg
patent: 4931406 (1990-06-01), Tomioka
patent: 4968637 (1990-11-01), Mozzi et al.
patent: 5204278 (1993-04-01), Inamura et al.
patent: 5242846 (1993-09-01), Izumi et al.
patent: 5242850 (1993-09-01), Tasaka

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