Semiconductor circuit device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307205, 307214, 307238, 307270, 307DIG5, H03K 1760, H03K 1908, H03K 1940, G11C 1140

Patent

active

040004295

ABSTRACT:
A semiconductor circuit device comprises a first depletion type n-channel insulated gate field effect transistor (hereinafter referred to as IG-FET) having its gate and source electrodes connected to each other, a second depletion type n-channel IG-FET connected between the source electrode of the first n-channel IG-FET and a positive power source and having its source and gate electrodes connected to each other, an enhancement type n-channel IG-FET connected between the source electrode of the first IG-FET and ground and having its gate electrode connected to an input terminal, an output terminal connected to the drain electrode of the first IG-FET, and a capacitor connected to the above-mentioned output terminal and ground. When a potential on the above-mentioned input terminal is dropped down to zero volt, the first depletion type IG-FET is abruptly shifted to the ON state, causing the capacitor to be abruptly charged by a positive power source. When the potential on the above-mentioned input terminal is raised to a predetermined positive level, the capacitor is slowly discharged through a zero-volt channel i.e. a remaining channel of the first depletion type IG-FET whose gate electrode is biased to zero volt.

REFERENCES:
patent: 3700981 (1972-10-01), Masuhara et al.
patent: 3778783 (1973-12-01), Proebsting et al.
patent: 3902082 (1975-08-01), Proebsting et al.
Atwood, "Field Effect Transistors"; IBM Tech. Discl. Bull.; vol. 6, No. 9, 91-93; 2/1964.
Kerins, "Low Power Circuit Design Using P-Channel MOS"; 1971 IEEE Int'l. Convention Digest; Session 4B; Paper 4B.2.; pp. 186-187.
Lohman, "Applications of MOSFETs in Microelectronics"; SCP and Solid-State Technology (pub.); pp. 23-29; 3/1966.
Falcoz et al., "Two-Phase Dynamic Logic with Enhancement Depletion Technology"; IBM Tech. Discl. Bull.; vol. 17, No. 9, pp. 2652-2653; 2/1975.

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