Semiconductor circuit array substrate with a photo-electric...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

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Details

C257S059000, C257S066000, C257S458000

Reexamination Certificate

active

07061019

ABSTRACT:
A circuit array substrate is provided with thin-film transistors4and5and PIN diode6formed on insulation substrate3. Active layer11and photo-electric sensor portion21are made of poly-silicon films. Impurities are doped into active layer11and photo-electric sensor portion21in the same process chamber, if necessary, to make their impurity concentrations different from each other. Thin-film transistors4and5with prescribed characteristics and PIN diode6with improved photosensitivity can be simultaneously, easily manufactured on insulation substrate3with a lesser number of processes.

REFERENCES:
patent: 5744822 (1998-04-01), Takayama et al.
patent: 6875999 (2005-04-01), Koyama et al.
patent: 2959682 (1999-07-01), None

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