Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-06-13
2006-06-13
Munson, Gene M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S066000, C257S458000
Reexamination Certificate
active
07061019
ABSTRACT:
A circuit array substrate is provided with thin-film transistors4and5and PIN diode6formed on insulation substrate3. Active layer11and photo-electric sensor portion21are made of poly-silicon films. Impurities are doped into active layer11and photo-electric sensor portion21in the same process chamber, if necessary, to make their impurity concentrations different from each other. Thin-film transistors4and5with prescribed characteristics and PIN diode6with improved photosensitivity can be simultaneously, easily manufactured on insulation substrate3with a lesser number of processes.
REFERENCES:
patent: 5744822 (1998-04-01), Takayama et al.
patent: 6875999 (2005-04-01), Koyama et al.
patent: 2959682 (1999-07-01), None
Fuchi Masayoshi
Ishida Arichika
Matsuura Yuki
Tada Norio
Munson Gene M.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Toshiba Matsushita Display Technology Co., Ltd.
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