Semiconductor circuit and power transistor protection circuit

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

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327427, G05F 110, G05F 302

Patent

active

060577282

ABSTRACT:
A decision circuit (10) monitors a main current flowing in an IGBT (1), and when operation of the IGBT (1) enters an overcurrent state and the control voltage applied to the control terminal (G) of the IGBT (1) is equal to or larger than the threshold voltage, it determines that the IGBT (1) is in the overcurrent state and places the IGBT (1) in an OFF state, and also outputs the result of the determination as an output signal to an external microcomputer from an error output terminal (9). Receiving this output signal, the microcomputer immediately fixes driving signals for the IGBT (1) and another IGBTs at an OFF signal level to disconnect these IGBTs, thus preventing the main current of the IGBT (1) from increasing to a still larger overcurrent to protect the IGBT (1). Generation of a turn-off surge voltage is suppressed in the overcurrent state by detecting the overcurrent state of the power transistor by earlier timing.

REFERENCES:
patent: 4890009 (1989-12-01), Miyazaki et al.
patent: 5510943 (1996-04-01), Fukunaga
patent: 5664550 (1997-09-01), Ito et al.
patent: 5789971 (1998-08-01), Colletti et al.
patent: 5852538 (1998-12-01), Masui
patent: 5910746 (1999-06-01), Fordyce

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