Semiconductor circuit

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Amplitude control

Reexamination Certificate

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Details

C327S390000

Reexamination Certificate

active

11018273

ABSTRACT:
The level shift circuit in the semiconductor circuit of the invention has a configuration comprising an input stage inverter circuit which inputs an input signal having a first voltage amplitude and outputs an inverted signal of this input signal, an output stage inverter circuit which inputs at least the output signal of the input stage inverter circuit and the output signal has a second voltage amplitude larger than the first voltage amplitude and a bootstrap circuit section which boosts a voltage value of input signal voltage of the output stage inverter circuit and the potential difference of the input signal and the output signal is held as a voltage component. The level shift circuit of each circuit is a Thin-Film Transistor at least using a semiconductor layer composed of amorphous silicon having single channel polarity as a switching element.

REFERENCES:
patent: 3898479 (1975-08-01), Proebsting
patent: 3987315 (1976-10-01), Matsue
patent: 4090096 (1978-05-01), Nagami
patent: 4443720 (1984-04-01), Takemae
patent: 5694061 (1997-12-01), Morosawa et al.
patent: 5828262 (1998-10-01), Rees
patent: 5949271 (1999-09-01), Fujikura
patent: 6677798 (2004-01-01), Chang et al.
patent: 6928136 (2005-08-01), Nagao et al.
patent: 2002/0158666 (2002-10-01), Azami et al.
patent: 2003/0020520 (2003-01-01), Miyake et al.
patent: 2000-286694 (2000-10-01), None
patent: 2002-026715 (2002-01-01), None
patent: 2003-179479 (2003-06-01), None

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