Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Smart card package
Reexamination Certificate
2006-05-02
2006-05-02
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Smart card package
Reexamination Certificate
active
07038307
ABSTRACT:
The present disclosure is directed to a semiconductor chip having protection against focused ion beam (FIB) attack. The semiconductor chip includes a conductor structure connected to a dielectric material, which has the property of giving rise, when ions are introduced, to an electrical conductivity which is sufficient for circuit-related connection of the conductors. When such a dielectric material is irradiated with ions, its electrical conductivity increases so that the electronic circuit integrated in the chip registers the electrical connection generated in this way between the conductors adjoining the dielectric material. Organic materials having a π-system are suitable for use as the dielectric material.
REFERENCES:
patent: 4491605 (1985-01-01), Mazurek et al.
patent: 4868489 (1989-09-01), Kowalski
patent: 5114780 (1992-05-01), Mercer et al.
patent: 5119173 (1992-06-01), Queen et al.
patent: 5247050 (1993-09-01), Hendricks
patent: 5298884 (1994-03-01), Gilmore et al.
patent: 5406630 (1995-04-01), Piosenka et al.
patent: 5861652 (1999-01-01), Cole et al.
patent: 5959157 (1999-09-01), Lau et al.
patent: 5965679 (1999-10-01), Godschalx et al.
patent: 6121495 (2000-09-01), Babb et al.
patent: 6798234 (2004-09-01), Laackmann et al.
patent: 2002/0126792 (2002-09-01), Fuhrmann et al.
patent: 2003/0218475 (2003-11-01), Gemmel
patent: 10044837 (2001-09-01), None
patent: 1109220 (2001-06-01), None
patent: WO 97/10193 (1997-03-01), None
patent: WO 98/11149 (1998-03-01), None
Technical Disclosure Bulletin, vol. 34, No. 10A, Mar. 1992, “One-Step Technique to Achieve Polyimide Planarization and via Formation Using a Resist and Plasma Etch Process”.
International Search Report Issued in PCT/DE02/03968.
Schmid Gunter
Ungar Franz
Darby & Darby
Sandvik Benjamin P.
LandOfFree
Semiconductor chip with FIB protection does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor chip with FIB protection, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor chip with FIB protection will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3630200