Semiconductor chip with backside conductor structure

Details Semiconductor chip with backside conductor structure Semiconductor chip with backside conductor structure

2008-09-25

2011-11-01

Ngo, Ngan (Department: 2893)

Semiconductor device manufacturing: process

With measuring or testing

C438S652000, C438S010000, C438S462000, C438S597000, C438S621000, C438S637000, C438S672000, C438S700000, C438S706000, C438S704000, C438S743000, C257SE21219, C257SE21252, C257SE21309, C257SE21347

Reexamination Certificate

active

08048689

ABSTRACT:
Various semiconductor devices and methods of testing such devices are disclosed. In one aspect, a method of manufacturing is provided that includes forming a bore from a backside of a semiconductor chip through a buried insulating layer and to a semiconductor device layer of the semiconductor chip. A conductor structure is formed in the bore to establish an electrically conductive pathway between the semiconductor device layer and the conductor structure. The conductor structure may provide a diagnostic pathway.

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