Semiconductor chip transducer

Measuring and testing – Speed – velocity – or acceleration – Angular rate using gyroscopic or coriolis effect

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73517B, G01P 904, G01P 1513

Patent

active

051953714

ABSTRACT:
A motion transducer fabricated from a semiconductor material by etched exposure and release of a resiliently suspended element. Electrical sensing and/or torquing is applied to the suspended element to produce mass or vibrational sensitivities to provide a transducer for various physical parameters. In the case of a gyroscopic transducer a mass is applied to the element and may be applied in a balanced configuration on either side. The semiconductor element and electrodes may be isolated by the use of buried PN junctions or dielectric layers, and a separately formed insulating dielectric bridge may be used to provide a support link between the suspended element and the remainder of the semiconductor material. A specific crystal orientation is useful in permitting etch control in freeing the suspended element from the remainder of the material. Suspension link stress relief is provided and a waffle construction achieved in the suspended element for use in motional transduction.

REFERENCES:
patent: 4342227 (1982-08-01), Petersen et al.
patent: 4598585 (1986-07-01), Boxenhorn
patent: 4600934 (1986-07-01), Aine et al.
patent: 4670092 (1987-06-01), Motamedi
patent: 4679434 (1987-07-01), Stewart
patent: 5025346 (1991-06-01), Tang et al.
Teknekron Sensor Development Corporation, article entitled "Micro-Vibratory Rate Sensor", 1080 Marsh Road, Menlo Park, CA 94025, 2 pages, undated.

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