Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Reexamination Certificate
2005-11-17
2010-02-02
Andújar, Leonardo (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
C257SE23036
Reexamination Certificate
active
07656032
ABSTRACT:
A semiconductor chip mounting wiring board2includes an insulating resin substrate5, a first conductive bump12formed on one side of the insulative resin substrate5to mount a semiconductor chip3, a wiring pattern15extending from the first conductive bump12toward the periphery of the insulating resin substrate5, a filled viahole9leading from the other side of the insulating resin substrate5to the wiring pattern15, and a second conductive bump13, or a conductive pad19, positioned just above the filled viahole9and electrically connected to the viahole9.A semiconductor module is produced by mounting the semiconductor chip3in advance on the first conductive bump12on the semiconductor chip mounting wiring board2and stacking a plurality of the wiring boards2and interlayer members20each having an opening27to receive the semiconductor chip3and a conductive post26or conductive pad connected to the second conductive bump13of the wiring board2alternately on each other with an adhesive applied between them, placing another interconnecting circuit board such as an I/O wiring board30or the like on an outermost layer, and by applying hot-pressing to the stack. The semiconductor module thus produced has a high connection reliability and can be designed for a high mounting density and a lower profile.
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English Language Abstract of JP 10/256429.
English Language Abstract of JP 9-219490.
English Language Abstract of JP 10-135267.
English Language Abstract of JP 10-163414.
English Language Abstract of JP 2002-016169.
English Language Abstract of JP 2001-085603.
English Language Abstract of JP 2001-068624.
English Language Abstract of JP 2001-244365.
English Language Abstract of JP 2001-267490.
English Language Abstract of JP 2001-298115.
English Language Abstract of JP 2002-026244.
English Language Abstract of JP 11-145381 published on May 28, 1999.
English Language Abstract of JP 2001-144218 published on May 25, 2001.
English Language Abstract of JP 2002-9227 published on Jan. 11, 2002.
English Language Abstract of JP 2000-208698 published on Jul. 28, 2000.
English Language Abstract of JP 09-289264 published on Nov. 4, 1997.
English Language Abstract of JP 2003-218273 published on Jul. 31, 2003.
Kariya Takashi
Nishikawa Masaya
Andújar Leonardo
Greenblum & Bernstein P.L.C.
Harrison Monica D
Ibiden Co. Ltd.
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