Semiconductor chip, method of fabricating the same and stack...

Details Semiconductor chip, method of fabricating the same and stack... Semiconductor chip, method of fabricating the same and stack...

2008-07-08

2011-10-18

Clark, S. V. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S750000

Reexamination Certificate

active

08039962

ABSTRACT:
A semiconductor chip may include a wafer, a semiconductor device formed on the wafer, a first dielectric layer formed on the wafer and the semiconductor device, a first metal interconnection formed on the first dielectric layer, a second dielectric layer formed on the first dielectric layer and the lower interconnection, and a third dielectric layer formed on the second dielectric layer. A second metal interconnection may be formed in the third dielectric layer, a first nitride layer formed on the third dielectric layer and the first metal interconnection, a via hole extending through the wafer, the first dielectric layer, the second dielectric layer, the third dielectric layer and the first nitride layer, a via formed in the via hole and a third metal interconnection formed on the first oxide layer, an exposed upper end of the via and the second metal interconnection.

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