Semiconductor device manufacturing: process – Semiconductor substrate dicing
Patent
1997-10-16
1999-03-16
Breneman, R. Bruce
Semiconductor device manufacturing: process
Semiconductor substrate dicing
438462, H01L 21301
Patent
active
058829881
ABSTRACT:
A method for fracturing semiconductor crystal wafers or bars to form individual chips with active devices without the use of mechanical scribing of the crystal. The method involves forming where fracture is desired a shallow trench by etching in the semiconductor wafer or bar, preferably with sharp corners, or providing over where the fracture is desired the edges of a metallization layer, or both. Applying pressure will then cause the crystal to fracture as a result of strains formed in the crystal at the sharp corners or below the metallization edges. The method is particularly suitable for the fabrication of laser chips from compound semiconductors.
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Flamholtz Sharon J.
Haberern Kevin W.
Tijburg Rudolf P.
Alanko Anita
Breneman R. Bruce
Philips Electronics North America Corporation
Wieghaus Brian J.
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