Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2006-03-30
2009-10-06
Kebede, Brook (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257SE21053
Reexamination Certificate
active
07598529
ABSTRACT:
A semiconductor chip (1), to which a layer sequence (2) intended for the production of a soldered connection has been applied. The layer sequence (2) comprises a solder layer (15) and an oxidation prevention layer (17), which follows the solder layer (15) as seen from the semiconductor chip (1). A barrier layer (16) is included between the solder layer (15) and the oxidation prevention layer (17). This prevents a constituent of the solder layer (15) from diffusing through the oxidation prevention layer (17) prior to the soldering operation, where it would effect oxidation that is disadvantageous for producing a soldered connection.
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Grolier Vincent
Illek Stefan
Ploessl Andreas
Cohen Pontani Lieberman & Pavane LLP
Kebede Brook
Osram Opto Semiconductors GmbH
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