Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2005-05-02
2008-10-14
Sefer, Ahmed (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257SE33006, C257SE33065, C257SE33070, C438S027000
Reexamination Certificate
active
07435999
ABSTRACT:
A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film layer is arranged at the rear side thereof and is connected thereto. At least one electrical front side contact structure is formed on the emission side and at least one trench is formed on the rear side. The trench defines at least a single partial region which essentially does not overlap the front side contact structure.
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Wegleiter Walter
Windisch Reiner
Wirth Ralph
Cohen Pontani Lieberman & Pavane LLP
Osram Opto Semiconductors GmbH
Sefer Ahmed
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