Semiconductor chip for optoelectronics and method for...

Details Semiconductor chip for optoelectronics and method for... Semiconductor chip for optoelectronics and method for...

2006-09-19

2006-09-19

Mai, Anh Duy (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S098000, C438S040000, C438S043000

Reexamination Certificate

active

07109527

ABSTRACT:
A semiconductor chip, particularly a radiation-emitting semiconductor chip, comprises an active thin-film layer in which a photon-emitting zone is formed, and a carrier substrate for the thin-film layer is arranged at a side of the thin-film layer faces away from the emission direction and is connected to it. At least one cavity via which a plurality of mesas is fashioned at the boundary between carrier substrate and thin-film layer is fashioned in the active thin-film layer proceeding from the carrier substrate.

REFERENCES:
patent: 3813587 (1974-05-01), Umeda et al.
patent: 4039890 (1977-08-01), Bailey et al.
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5087949 (1992-02-01), Haitz
patent: 5376580 (1994-12-01), Kish et al.
patent: 5491350 (1996-02-01), Unno et al.
patent: 6091085 (2000-07-01), Lester
patent: 6111272 (2000-08-01), Heinen
patent: 6229160 (2001-05-01), Krames et al.
patent: 2001/0000209 (2001-04-01), Krames et al.
patent: 2002/0009238 (2002-01-01), Bird
patent: 1 589 099 (1970-03-01), None
patent: 27 16 205 (1977-11-01), None
patent: 198 07 758 (1998-12-01), None
patent: 199 11 717 (2000-09-01), None
patent: 0 022 486 (1981-01-01), None
patent: 0 319 907 (1989-06-01), None
patent: 0 544 512 (1993-06-01), None
patent: 0 905 797 (1999-03-01), None
patent: 1553783 (1979-10-01), None
patent: 2 326 023 (1998-12-01), None
patent: 406151955 (1994-05-01), None
patent: WO 01/41219 (2001-06-01), None
Patent Abstracts of Japanfor Japanese 06268252 of Sep. 22, 1994.
Patent Abstracts of Japanfor Japanese 06318731 of Nov. 15, 1994.
M.R. Krames, et al., “High-power truncated-inverted-pyramid (A1xGa1-x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency”, Applied Physics Letter, vol. 75, No. 16, pp. 2365-2367, Oct. 1999.
R. Windisch et al., “High-efficiency non-resonant cavity light-emitting diodes”, Electronics Letters, vol. 34, No. 11, pp. 1153-1154, May 28, 1998.
W.N. Carr et al., “One-Watt GaAsp-nJunction Infrared Source”, Applied Physics Letters, vol. 3, No. 10, pp. 173-175, Nov. 15, 1963.
“Nova Flares LEDs”, Internet web page, Jun. 7, 1999.

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