Semiconductor chip for optoelectronics

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07547921

ABSTRACT:
An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.

REFERENCES:
patent: 3813587 (1974-05-01), Umeda et al.
patent: 4039890 (1977-08-01), Bailey et al.
patent: 4642441 (1987-02-01), Kenyon
patent: 5008718 (1991-04-01), Fletcher et al.
patent: 5087949 (1992-02-01), Haitz
patent: 5313484 (1994-05-01), Arimoto
patent: 5376580 (1994-12-01), Kish et al.
patent: 5385632 (1995-01-01), Goossen
patent: 5491350 (1996-02-01), Unno et al.
patent: 5780321 (1998-07-01), Shieh et al.
patent: 6091085 (2000-07-01), Lester
patent: 6111272 (2000-08-01), Heinen
patent: 6229160 (2001-05-01), Krames et al.
patent: 6410942 (2002-06-01), Thibeault
patent: 6455878 (2002-09-01), Bhat et al.
patent: 2001/0000209 (2001-04-01), Krames et al.
patent: 2002/0009238 (2002-01-01), Bird
patent: 2002/0102760 (2002-08-01), Gottfried
patent: 1 589 099 (1970-03-01), None
patent: 27 16 205 (1977-11-01), None
patent: 198 07 758 (1998-12-01), None
patent: 199 11 717 (2000-09-01), None
patent: 0 022 486 (1981-01-01), None
patent: 0 319 907 (1989-06-01), None
patent: 0 544 512 (1993-06-01), None
patent: 0 905 797 (1999-03-01), None
patent: 1 553 783 (1977-04-01), None
patent: 2 326 023 (1998-12-01), None
patent: 49-5585 (1974-01-01), None
patent: 52-124885 (1977-10-01), None
patent: 58-92751 (1983-06-01), None
patent: 61-183986 (1986-08-01), None
patent: 04-63478 (1992-02-01), None
patent: 05-327012 (1993-12-01), None
patent: 6-151955 (1994-05-01), None
patent: 06-318731 (1994-11-01), None
patent: 7-142815 (1995-06-01), None
patent: 07-193275 (1995-07-01), None
patent: 11-274568 (1999-10-01), None
patent: WO 01/41219 (2001-06-01), None
Japanese Abstract, Publication No. 06318731 A, Date of Publication Nov. 15, 1994 and English translation of Japanese patent.
Japanese Abstract, Publication No. 6-268252, Publication Date Sep. 22, 1994 and English translation of Japanese Patent.
Krames et al. Appl. Phys. Lett., vol. 75, 1999, p. 2365.
Windisch et al., Electronics Letters, vol. 34 1998, p. 1153.
Carr et al., Appl. Phys. Lett. vol. 3, 1963, p. 173.
Nova Flares LEDs, Internet web page, Jun. 7, 1999.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor chip for optoelectronics does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor chip for optoelectronics, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor chip for optoelectronics will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4131877

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.