Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-12-05
2006-12-05
Richards, N. Drew (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S099000, C257SE33074
Reexamination Certificate
active
07145181
ABSTRACT:
A semiconductor chip, in particular a light-emitting diode, has a substrate (2), on which a sequence of semiconductor layers (3) with an active zone (5) has been applied. Above the sequence of semiconductor layers (3) there is a stepped window layer (6), which is structured in the manner of a Fresnel lens and has with regard to the coupling out of radiation the function of a hemispherical lens (7). This produces a semiconductor chip with particularly high coupling-out efficiency.
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English translation of JP 2001-28456A.
Oppliger Y., et al., “One-step 3D shaping using a gray-tone mask”, Microelectronic Engineering, Bd. 23, pp. 449-454, 1994.
Osram Opto Semiconductors GmbH
Richards N. Drew
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