Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Beam leads
Reexamination Certificate
2005-06-30
2008-10-07
Ngo, Ngan (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Beam leads
C257S750000, C257S773000, C257S776000, C257SE23014
Reexamination Certificate
active
07432594
ABSTRACT:
A semiconductor device has a semiconductor chip including first and second surfaces opposed to each other in a thickness direction of the semiconductor chip, wherein the first and second surfaces include first and second electrode surfaces respectively, and first and second electrically conductive members covering the first and second electrode surfaces respectively as seen in the thickness direction to be electrically connected to the first and second electrode surfaces respectively.
REFERENCES:
patent: 2003/0122232 (2003-07-01), Hirano et al.
patent: 2005/0077599 (2005-04-01), Miura et al.
patent: 2003-086737 (2003-03-01), None
Ashida Kisho
Hata Toshiyuki
Hisano Nae
Kawano Kenya
Muto Akira
Ngo Ngan
Renesas Technology Corp.
Townsend and Townsend / and Crew LLP
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