Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-01-04
2005-01-04
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S786000, C257S659000, C257S503000
Reexamination Certificate
active
06838773
ABSTRACT:
A semiconductor chip of rewiring layer-integral type capable of preventing a maloperation by noise and a deterioration of communication characteristics and a semiconductor device with excellent communication characteristics; the semiconductor chip, wherein a rewiring layer (3) is formed on a circuit formed surface (1a) through an insulating layer (2) so as to form an antenna coil (4) with the rewiring layer (3), the antenna coil (4) is formed around the periphery of an analog circuit (21) on the circuit formed surface (1a) by avoiding forming on the analog circuit (21), the analog circuit (21) may be formed by collecting analog circuits to be formed in the semiconductor chip (1A) therein, may be one of the particularly noise-susceptible analog circuits such as a power circuit, a calculation amplifier, a comparison amplifier, an RF receiving part, an RF transmitting part, an RF synthesizer part, and a voltage build-up circuit and an amplifying circuit forming a part of a memory part, or may be a coil provided in a part of the analog circuit formed in the semiconductor chip (1A).
REFERENCES:
patent: 6380567 (2002-04-01), Okitaka
patent: 6525410 (2003-02-01), Gelsomini et al.
patent: 20030116790 (2003-06-01), Kikuchi et al.
patent: 10-162112 (1998-06-01), None
patent: 2000-137779 (2000-05-01), None
Hino Yoshiharu
Kikuchi Yuji
Kishimoto Kiyoharu
Nakagawa Kazunari
Hitachi Maxell Ltd.
Prenty Mark V.
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