Semiconductor chip and semiconductor device including...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip

Reexamination Certificate

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Details

C257SE25013, C257SE23125, C257SE23142, C257SE23052, C257SE23036, C257SE23079, C257S686000, C257S685000, C257S723000, C257S786000, C257S202000, C257S203000, C257S207000, C257S208000, C257S210000, C257S211000, C257S698000, C257S691000, C257S784000

Reexamination Certificate

active

07132752

ABSTRACT:
To prevent short-circuit due to contact of bonding wires each other and to make a semiconductor device compact. A semiconductor chip with a rectangular main surface may comprise: a first side composing the main surface; a second side opposed to the first side; a main electrode pad group composed of a plurality of main electrode pads, which plurality of main electrode pads is arranged on the main surface along the first side; a first electrode pad group composed of a plurality of first electrode pads, which plurality of first electrode pads is arranged between the first side and the main electrode pad group; a second electrode pad group composed of a plurality of second electrode pads, which plurality of second electrode pads is arranged on the main surface along the second side; a first interconnection connecting the main electrode pad with the first electrode pad; and a second interconnection connecting the main electrode pad with the second electrode pad.

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