Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2006-11-07
2006-11-07
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257SE25013, C257SE23125, C257SE23142, C257SE23052, C257SE23036, C257SE23079, C257S686000, C257S685000, C257S723000, C257S786000, C257S202000, C257S203000, C257S207000, C257S208000, C257S210000, C257S211000, C257S698000, C257S691000, C257S784000
Reexamination Certificate
active
07132752
ABSTRACT:
To prevent short-circuit due to contact of bonding wires each other and to make a semiconductor device compact. A semiconductor chip with a rectangular main surface may comprise: a first side composing the main surface; a second side opposed to the first side; a main electrode pad group composed of a plurality of main electrode pads, which plurality of main electrode pads is arranged on the main surface along the first side; a first electrode pad group composed of a plurality of first electrode pads, which plurality of first electrode pads is arranged between the first side and the main electrode pad group; a second electrode pad group composed of a plurality of second electrode pads, which plurality of second electrode pads is arranged on the main surface along the second side; a first interconnection connecting the main electrode pad with the first electrode pad; and a second interconnection connecting the main electrode pad with the second electrode pad.
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Nixon & Peabody LLP
Oki Electric Industry Co. Ltd.
Studebaker Donald R.
Williams Alexander Oscar
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