Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2011-08-09
2011-08-09
Sandvik, Benjamin P (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S773000, C257SE23060, C257SE23129
Reexamination Certificate
active
07994638
ABSTRACT:
In this semiconductor chip3, a table electrode13is interposed between a bump electrode14and an electrode pad6. The table electrode13is formed by forming a plurality of cores15having a smaller Young's modulus than the bump electrode14, on the electrode pad6, and then covering the surfaces of the cores15with a conductive electrode16. When the semiconductor chip3is flip-chip mounted, the bump electrode14is plastically deformed and the table electrode13is elastically deformed appropriately, thereby obtaining a good conductive state.
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Iwase Teppei
Kumazawa Kentaro
Nobori Kazuhiro
Tomura Yoshihiro
Yamada Yuichiro
Hamre Schumann Mueller & Larson P.C.
Panasonic Corporation
Sandvik Benjamin P
Soderholm Krista
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