Semiconductor chip and manufacturing method thereof

Details Semiconductor chip and manufacturing method thereof Semiconductor chip and manufacturing method thereof

2011-01-04

2011-01-04

Cao, Phat X (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

C257S738000, C257SE23068

Reexamination Certificate

active

07863741

ABSTRACT:
A semiconductor chip formed with a bump such that the bump corresponds to a pad electrode. The pad electrode is covered with a nickel layer. The bump has an indium layer and an intermediate metal compound layer disposed between the indium layer and the nickel layer, and the intermediate metal compound layer is formed by alloying the indium layer and a copper layer containing copper atoms of not less than 0.5 atomic percent and not more than 5 atomic percent with respect to the indium atoms in the indium layer.

REFERENCES:
patent: 5131582 (1992-07-01), Kaplan et al.
patent: 6819002 (2004-11-01), Chen et al.
patent: 2006/0141671 (2006-06-01), Houle et al.
patent: 2697116 (1997-09-01), None
patent: 2000-349123 (2000-12-01), None

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