Semiconductor chemical sensor device with specific heater struct

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal

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Details

73 3106, 338 34, H01L 2358, G01N 700, H01C 700

Patent

active

057866082

ABSTRACT:
A semiconductor device (50) comprises a semiconductor base, a heater (20) formed over the semiconductor base from conductive material, such as polysilicon, and a layer (22) for heating by the heater. The heater (20) comprises first (24) and second (26) arms extending over the semiconductor base from a heater portion (28) and an opening (34) extending vertically through the heater portion (28). A first heater contact (30) is coupled to an end of the first arm (24) and a second heater contact (32) is coupled to an end of the second arm (26). The layer (22) is formed over the opening (34) and heater portion (28) such that a vertical axis through the center (36) of the opening (34) extends through the center (36) of the layer (22).

REFERENCES:
patent: 4343768 (1982-08-01), Kimura
patent: 4580439 (1986-04-01), Manaka
patent: 4967589 (1990-11-01), Yagawara et al.
patent: 5147523 (1992-09-01), Yagawara et al.
patent: 5250170 (1993-10-01), Yagawara et al.
patent: 5652443 (1997-07-01), Kasai

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