Semiconductor charge transfer device including charge quantity d

Details Semiconductor charge transfer device including charge quantity d Semiconductor charge transfer device including charge quantity d

1991-09-06

1992-12-15

Munson, Gene M.

Electrical pulse counters, pulse dividers, or shift registers: c

Charge transfer device

Particular input or output means

257215, G11C 1928, H01L 2978

Patent

active

051723999

ABSTRACT:
A charge transfer device includes a signal charge transfer region including a first conductivity type first low dopant concentration semiconductor region on which transfer electrodes are disposed via an insulating film, a charge storage region including a first conductivity type second low dopant concentration semiconductor region connected to the first low dopant concentration semiconductor region, a second conductivity type semiconductor region disposed on the charge storage region, a first conductivity type high dopant concentration semiconductor region disposed at the surface of and spaced from the first conductivity type second low dopant concentration semiconductor region at a region opposite the first conductivity type first low dopant concentration semiconductor region, and a detector for detecting the quantity of signal charges stored in the charge storage region from the resistance value between two points in a portion of said second conductivity type semiconductor region. The charge storage region is completely depleted during the resetting operation, reset noise is eliminated, and S/N ratio is enhanced.

REFERENCES:
patent: 3918070 (1975-11-01), Shannon
patent: 4074302 (1978-02-01), Brewer
patent: 4672645 (1987-06-01), Bluzer et al.
patent: 4984045 (1991-01-01), Matsunga
Mutoh et al., "New Low Noise Output Amplifier for HIgh Definition CCD Image Sensor", IEDM 89, pp. 173-176.

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