Semiconductor charge transfer device having a decoupling gate fo

Details Semiconductor charge transfer device having a decoupling gate fo Semiconductor charge transfer device having a decoupling gate fo

1979-05-15

1981-07-21

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 24, 307DIG3, G11C 1928, H01L 2978

Patent

active

042800676

ABSTRACT:
A semiconductor charge transfer device comprising: a semiconductor charge transfer element including a plurality of transfer electrodes on an insulating layer formed on a semiconductor substrate and a detection node formed on the semiconductor substrate; potential barrier means for signal charge packets transfer provided between the final stage cell of the semiconductor charge transfer element and the detection node; and a differential detecting circuit of flip-flop type having a drive transistor directly coupled with the detection node, wherein the potential barrier means provides a potential barrier against the low level of the detection node when the drive transistor is conductive.

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Rosenbaum et al. "A 16384-Bit High-Density CCD Memory", IEEE J. Solid-State Circuits, vol. sc-11 (2/76) pp. 33-39.
Sequin et al., Charge Transfer Devices, Academic Press, N. Y. (7/75).

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