Semiconductor charge coupled device with split electrode configu

Details Semiconductor charge coupled device with split electrode configu Semiconductor charge coupled device with split electrode configu

1977-07-25

1978-11-21

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 24, 357 59, 333 70T, G11C 1928, H03H 728, H01L 2978, H01L 2904

Patent

active

041267940

ABSTRACT:
A semiconductor charge coupled device (CCD) with split electrode charge sensors contains a localized connecting impurity doped region, of opposite conductivity type from that of the semiconductor transfer sites, underlying the gap between each pair of split electrodes; and each such connecting region is contiguous with both transfer sites underlying each pair of split electrodes, thereby serving to equilibrate the potentials of both such transfer sites. The entire downstream edge of each of these connecting regions is bounded by a separate localized channel stopping auxiliary barrier region of higher threshold than that of the charge transfer channel, in order to suppress dynamic signal charge transfer inefficiency caused by spurious contributions of charge from the connecting regions to the propagating signal charge packets.

REFERENCES:
patent: 4005377 (1977-01-01), Engeler
patent: 4075514 (1978-02-01), Sequin
Ibrahim et al., "CCD's for Tranversal Filter Applications" IEEE Int. Electron Devices Meeting (12/74) Technical Dig., pp. 240-243.
Ibrahim et al., "Multiple Filter Characteristics Using a Single CCD Structure" Int. Conf. Application Charge-Coupled Devices, San Diego (10/75), Proc. pp. 245-247.
Sequin & Tompsett, Charge Transfer Devices, Academic Press, N.Y. (7/75) pp. 42-44.

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