Semiconductor charge-coupled device and process of fabrication t

Details Semiconductor charge-coupled device and process of fabrication t Semiconductor charge-coupled device and process of fabrication t

1987-10-22

1989-02-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 53, H01L 2978, H01L 2714, H01L 3100, H01L 29167

Patent

active

048064980

ABSTRACT:
A semiconductor charge-coupled device is fabricated with use of a layer of a doped semiconductor having an insulator layer thereon. Suitable dopant ions such as nitrogen or argon ions are implanted into the doped semiconductor layer so that the projected range of the ions introduced into the semiconductor layer is located substantially at the interface between the doped semiconductor layer and the insulator layer for forming an interlevel layer providing an increased surface state at the aforesaid interface. Where the interlevel layer is formed by implantation of nitrogen ions the structure having the nitrogen ions implanted into the doped semiconductor layer is preferably annealed at a relatively high temperature. The charge-coupled device may be designed either as the surface-channel type or as the buried-channel type with a single-phase, two-phase, three-phase or four-phase driving scheme.

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