Semiconductor channel on insulator structure

Details Semiconductor channel on insulator structure Semiconductor channel on insulator structure

2007-06-26

2007-06-26

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S066000, C257S094000, C438S268000, C438S270000

Reexamination Certificate

active

11292911

ABSTRACT:
A method including forming a via dielectric layer on a semiconductor device substrate; forming a trench dielectric layer on the via dielectric layer; forming a trench through the trench dielectric layer to expose the via dielectric layer; forming a via in the via dielectric layer through the trench to expose the substrate; and forming a semiconductor material in the via and in the trench. An apparatus including a device substrate; a dielectric layer formed on a surface of the device substrate; and a device base formed on the dielectric layer including a crystalline structure derived from the device substrate.

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