Semiconductor ceramic composition for boundary layer capacitors

Details Semiconductor ceramic composition for boundary layer capacitors Semiconductor ceramic composition for boundary layer capacitors

1980-07-03

1982-04-06

Hess, Bruce H.

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Continuous and nonuniform or irregular surface on layer or...

252 623BT, 357 61, 428409, 428472, 501123, 501136, B32B 504, B32B 1516, C04B 3546

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active

043236170

ABSTRACT:
A semiconductor ceramic composition for boundary layer capacitors which consists essentially of 99.6 to 99.995 wt. % of a semiconductor ceramic component consisting of strontium titanate or modified strontium titanate solid solution and at least one semiconductorizing agent, and 0.005 to 0.1 wt. % of phosphorus together with or without 0.015 to 0.3 wt. % of copper is disclosed. The composition makes it possible to produce boundary layer capacitors having high permittivity and high breakdown voltage at high percent non-defective.

REFERENCES:
patent: 3426251 (1969-02-01), Prokopowicz

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