Semiconductor ceramic composition

Details Semiconductor ceramic composition Semiconductor ceramic composition

1974-04-26

1977-03-29

Sebastian, Leland A.

Compositions

Electrically conductive or emissive compositions

Metal compound containing

252518, 252521, H01B 106

Patent

active

040148220

ABSTRACT:
A semiconductor ceramic composition consists essentially of 83.95 to 98.65 mol% of barium titanate, 0.13 to 0.45 mol% of manganese oxide, 0.20 to 15 mol% of silicon dioxide and 0.23 to 1.65 mol% of one or more oxides selected from the group consisting of oxides of rare earth elements, bismuth and antimony, the content of one or more oxides of said group being 0.10 to 1.20 mol% greater than that of manganese oxide. The semiconductor ceramic composition has a markedly high positive resistance temperature characteristic.

REFERENCES:
patent: 3373120 (1968-03-01), Nitta et al.

Affiliated with

Also associated with

Rating

Semiconductor ceramic composition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor ceramic composition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor ceramic composition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-547843