Semiconductor ceramic and electronic element fabricated from the

Details Semiconductor ceramic and electronic element fabricated from the Semiconductor ceramic and electronic element fabricated from the

1999-03-04

2000-11-28

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

257613, 501135, 501136, 501137, 501138, H01L 310256, H01L 2306, C04B 3546, C04B 3548, C04B 3549

Patent

active

061539317

ABSTRACT:
The present invention provides a barium titanate-based semiconducting ceramic which exhibits excellent PTC characteristic and which can be fired at a temperature lower than 1000.degree. C. The present invention also provides an electronic element fabricated from the ceramic. The semiconducting ceramic contains, in a semiconducting sintered barium titanate; boron oxide; an oxide of at least one of barium, strontium, calcium, lead, yttrium and a rare earth element; and an optional oxide of at least one of titanium, tin, zirconium, niobium, tungsten and antimony in which the atomic boron is

REFERENCES:
patent: 4335216 (1982-06-01), Hodgkins et al.
patent: 4540676 (1985-09-01), Chu et al.
patent: 5296426 (1994-03-01), Burn

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