Semiconductor cell for neural network and the like

Details Semiconductor cell for neural network and the like Semiconductor cell for neural network and the like

1988-07-27

1991-10-08

Prenty, Mark

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 40, 357 41, 357 42, 357 45, 307201, 365185, H01L 2968, H01L 2702, H01L 2710, H03K 1908

Patent

active

050558978

ABSTRACT:
A cell employing floating gate storage device particularly suited for neural networks. The floating gate from the floating gate device extends to and becomes part of a second, field effect device. Current through the second device is affected by the charge on the floating gate. The weighting factor for the cell is determined by the amount of charge on the floating gate. By charging the floating gate to various levels, a continuum of weighting factors is obtained. Multiplication is obtained since the current through the second device is a function of the weighting factor.

REFERENCES:
patent: 3906296 (1971-08-01), Maserjian et al.
patent: 4595999 (1986-06-01), Betirac
patent: 4660166 (1987-04-01), Hopfield
patent: 4760437 (1988-07-01), Denker et al.
patent: 4773024 (1988-09-01), Faggin et al.
patent: 4782460 (1988-11-01), Spencer
patent: 4802103 (1989-01-01), Faggin et al.

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