Semiconductor CCD transversal filter with controllable threshold

Wave transmission lines and networks – Coupling networks – Frequency or time domain filters and delay lines utilizing...

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307221D, 333166, 357 24, H03H 1502, H03K 5135, G11C 1928

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active

042451990

ABSTRACT:
A filter in the form of a semiconductor charge coupled device (CCD) split electrode transveral filter section (10) of many transfer stages, typically of the order of 150, is characterized by a controllable detection threshold level by means of the addition of an auxiliary CCD split-electrode section (20) of but a few stages, typically one or two. Each segment of a split-electrode 209 of this auxiliary section (20) is connected to the corresponding sense line of the transveral filter section (10).

REFERENCES:
patent: 4032867 (1977-06-01), Engeler et al.
patent: 4075514 (1978-02-01), Sequin
patent: 4126836 (1978-11-01), Carnes et al.
patent: 4139783 (1979-02-01), Engeler
Baertsch et al., "The Design and Operation of Practical Charge-Transfer Transversal Filters", in IEEE Trans. on Electron Devices, vol. ED-23, No. 2, Feb. 1976, pp. 133-141.
Ibraham et al., "Multiple Filter Characteristics Using a Single CCD Structure", 1975, International Conference on the Application of Charge-Coupled Devices, Oct. 1975, pp. 245-249.

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