Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1998-03-23
2000-05-16
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257 11, 257213, 257488, 257491, 257447, H01L 2906
Patent
active
06064074&
ABSTRACT:
Semiconductor device with a semiconductor cathode having an emissive part (pn junction) separated from a contact part which has locations at which a controlled breakdown occurs on a contact part metallization at excessive voltages, so that, during manufacture and operation, the emissive part in an election tube is protected from damage.
REFERENCES:
patent: 5604355 (1997-02-01), Van Zutphen
De Samber Mark A.
Gehring Frederik C.
Hijzen Erwin A.
Kroon Ron
Van Zutphen Tom
Abraham Fetsum
Kraus Robert J.
U.S. Philips Corporation
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