Semiconductor capacitor with praseodymium oxide as dielectric

Details Semiconductor capacitor with praseodymium oxide as dielectric Semiconductor capacitor with praseodymium oxide as dielectric

2006-09-26

2006-09-26

Ha, Nguyen T. (Department: 2831)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C361S321100, C361S321200, C361S311000, C361S313000, C438S583000, C438S585000, C257S295000, C257S296000

Reexamination Certificate

active

07113388

ABSTRACT:
In accordance with the invention there is provided a semiconductor capacitor having a first semiconductor layer which forms a first capacitor electrode and which includes silicon, a second capacitor electrode and a capacitor dielectric including praseodymium oxide between the capacitor electrodes, in which provided between the capacitor dielectric including praseodymium oxide and at least the first semiconductor layer including silicon is a first thin intermediate layer representing a diffusion barrier for oxygen. In particular the thin intermediate layer can include oxynitride.

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patent: 100 39 327 (2003-10-01), None
patent: WO 02/31875 (2002-04-01), None

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