Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-02-01
2005-02-01
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S306000
Reexamination Certificate
active
06849920
ABSTRACT:
A semiconductor capacitor configured so as to use buried wirings, as electrodes, formed in an interlayer dielectric is provided on a semiconductor substrate which is capable of preventing an increase in a number of manufacturing processes with occurrence of parasitic capacity being suppressed. The semiconductor capacitor has a capacitive insulating film made up of an etching stopper film formed only in a region being sandwiched between a via plug serving as an upper electrode and a lower electrode, in which the capacitive insulating film is not formed in a region other than the facing region.
REFERENCES:
patent: 6300682 (2001-10-01), Chen
patent: 6387775 (2002-05-01), Jang et al.
patent: 6391707 (2002-05-01), Dirnecker et al.
patent: 6545306 (2003-04-01), Kim et al.
patent: 6713840 (2004-03-01), Lee et al.
patent: 1221715 (2002-07-01), None
patent: 2000-228497 (2000-08-01), None
patent: 2001-274328 (2001-10-01), None
patent: 2003-51501 (2003-02-01), None
NEC Electronics Corporation
Scully Scott Murphy & Presser
Wilson Allan R.
LandOfFree
Semiconductor capacitive element, method for manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor capacitive element, method for manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor capacitive element, method for manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3447063